Cambridge GaN Devices Secures $39.8M to Drive Breakthrough in Energy-Efficient GaN Power Devices

We are thrilled to announce that Cambridge GaN Devices Ltd. (CGD), a pioneering spin-out from the University of Cambridge, has successfully raised $39,800,000 in funding. This exciting milestone underscores the immense confidence that investors place in CGD’s innovative approach and its proven track record in the semiconductor industry. As a fabless company at the forefront of designing, developing, and commercialising energy-efficient GaN-based power devices, CGD is committed to creating greener electronics that power a sustainable future. The funds will primarily be dedicated to scaling manufacturing capabilities and accelerating the commercial rollout of its groundbreaking ICeGaN™ technology—an industry-first enhancement-mode GaN transistor that functions like a Silicon MOSFET without requiring special gate drivers, driving circuitry, or unique gate voltage clamping mechanisms. Additionally, the new capital infusion will lead to the expansion of the cutting-edge H1 & H2 Series, which are poised to revolutionise applications in power conversion and electronics by delivering unprecedented performance improvements and efficiency gains. With unparalleled technical expertise and a deep-rooted commitment to innovation, CGD is setting new benchmarks in energy management and power efficiency. This funding not only fuels the company’s ambitious growth plans but also reinforces its leadership in the clean-tech revolution by enabling greener solutions that reduce energy consumption and enhance productivity across industries. To learn more about how Cambridge GaN Devices Ltd. is reshaping the semiconductor landscape, please visit www.camgandevices.com, and join the conversation on Facebook, Twitter, Instagram, YouTube, and 剑桥氮化镓器件 on WeChat.